| PART |
Description |
Maker |
| TA060-120-35-27 |
6 ~ 12GHz 35dB Gain 27dBm Power Amplifier
|
Transcom, Inc.
|
| R414730000 |
ATTENUATOR, N 2W 30DB 12.4GHZATTENUATOR, N 2W 30DB 12.4GHZ; Impedance:50R; Attenuation:30dB; Connector type:N; Frequency, operating max:12.4GHz; Power rating:2W 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR
|
Radiall S.A.
|
| SY58034U |
6GHz, 1:6 CML FANOUT BUFFER WITH 2:1 MUX INPUT AND INTERNAL I/O TERMINATION 6GHz:6扇出缓冲器与白血:1 MUX输入和内部的I / O终止
|
Micrel Semiconductor, Inc.
|
| SZM-3166Z SZM-3166Z-EVB1 |
3.3-3.6GHz 2W Power Amplifier
|
http://
SIRENZA MICRODEVICES
|
| LX5506M LX5506M09 LX5506MLQ-TR |
InGaP HBT 4.5 ?6GHz Power Amplifier
|
Microsemi Corporation
|
| EIM8911-5 |
8.95-10.6GHz Multi-Stage Power Amplifier
|
Excelics Semiconductor, Inc.
http://
|
| 2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A.
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
From old datasheet system
|
General Electric Solid State
ETC[ETC]
|
| MRF16006 MRF16006-15 |
The RF Line NPN Silicon Power Transistor 6.0W , 1.6GHz, 28V
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| AT90-02331 AT90-0233-TB AT90-0233TR |
Digital Attenuator 30dB, 4-Bit, TTL Driver, DC-2.5 GHz
|
Tyco Electronics
|
| R1005300L |
30dB Reverse Hybrid 5MHz to 100MHz (Low Current)
|
RF Micro Devices
|
| AT90-1233TR AT90-12331 AT90-1233-TB |
Digital Attenuator, 30dB, 4-Bit, TTL Driver DC - 2.5 GHz
|
Tyco Electronics
|
| LD7215 LD7215C LD7215D |
6 GHz / 3 kW / HELIX TYPE / PPM FOCUSING / HIGH POWER GAIN / FLAT GAIN VARIATION
6 GHz, 3 kW, HELIX TYPE, PPM FOCUSING, HIGH POWER GAIN, FLAT GAIN VARIATION 6千兆赫，3千瓦，螺旋式，分之为重点，高功率增益平坦增益变化
|
NEC Corp.
NEC, Corp.
|
