| PART |
Description |
Maker |
| MNA-7 MNA-SERIES MNA-2 MNA-3 MNA-4 MNA-5 MNA-6 |
Monolithic Amplifiers High Directivity, 50? 0.5 to 5.9 GHz
Monolithic Amplifiers High Directivity 50 0.5 to 5.9 GHz
Monolithic Amplifiers High Directivity, 50з, 0.5 to 5.9 GHz
Monolithic Amplifiers High Directivity, 50, 0.5 to 5.9 GHz
|
MINI[Mini-Circuits]
|
| TA020-060-40-30 |
2.0 ?6.0 GHz 30dBm Amplifiers
|
Transcom, Inc.
|
| DG03-166 |
MONOLITHIC AMPLIFIERS 50з BROADBAND DC to 8 GHz
|
MINI[Mini-Circuits]
|
| TA060-120-15-27 |
6.0 ?12.0 GHz 17dB Gain 27dBm Amplifiers
|
Transcom, Inc.
|
| ERA-5XSM |
Monolithic Amplifier 50OHM, Broadband, DC to 4 GHz
MONOLITHIC AMPLIFIERS 50 BROADBAND DC to 8 GHz
|
MINI[Mini-Circuits]
|
| BFQ76 A0538 Q62702-F804 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents up to 20 mA.)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFQ72 |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.)
|
Siemens
|
| MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 |
MW4IC2230MBR1, MW4IC2230GMBR1 W-CDMA 2.11-2.17 GHz, 30 W, 28 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
MOTOROLA[Motorola, Inc]
|
| Q62702-F775 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.)
|
SIEMENS AG
|
| BFR93P Q62702-F1051 |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFQ19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
