| PART |
Description |
Maker |
| IC43R16160 IC43R16160-5T IC43R16160-6T IC43R16160- |
DYNAMIC RAM, DDR
4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IC43R16160-7TG IC43R16160-6TG |
4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM 4米16位4个银行（256兆）DDR SDRAM内存
|
Panasonic, Corp.
|
| UPD44324092BF5-E33-FQ1 UPD44324182BF5-E33-FQ1 PD44 |
4M X 9 DDR SRAM, 0.45 ns, PBGA165
2M X 18 DDR SRAM, 0.45 ns, PBGA165
36M-BIT DDR II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| BS62LV8005 BS62LV8005BC BS62LV8005BI BS62LV8005EC |
DDR-II, 25-Bit 1:1 or 14-Bit 1:2 Configurable Registered Buffer
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| SSTV16859DGG SSTV16859BS SSTV16859EC |
2.5 V 13-bit to 26-bit SSTL_2 registered buffer for stacked DDR DIMM
|
NXP Semiconductors
|
| ICSSSTV32852YHT |
DDR 24-Bit to 48-Bit Registered Buffer 复员24位到48位注册缓冲区
|
Electronic Theatre Controls, Inc.
|
| ASM4SSTVF16859-56QR ASM4SSTVF16859-56QT ASM4SSTVF1 |
2.3 V -2.7 V, DDR 13-bit to 26-bit registered buffer
|
Alliance Semiconductor
|
| ICSSSTVA16859B ICSSSTVA16859BG-T ICSSSTVA16859BGLF |
DDR 13-Bit to 26-Bit Registered Buffer
|
Integrated Circuit Systems
|
| UPD45D128442G5-C75-9LG UPD45D128164G5-C75-9LG UPD4 |
128M-bit(8M-word x 4-bit x 4-bank)DDR SDRAM
128M-bit(2M-word x 16-bit x 4-bank)DDR SDRAM
128M-bit(4M-word x 8-bit x 4-bank)DDR SDRAM
|
NEC
|
| A48P3616 |
8M X 16 Bit DDR DRAM
|
AMICC[AMIC Technology]
|
| HYMD116M725BL8-H HYMD116M725BL8-J HYMD116M725BL8-K |
Unbuffered DDR SDRAM SO-DIMM
16Mx72|2.5V|J/M/K/H/L|x9|DDR SDRAM - SO DIMM 128MB 16Mx72 | 2.5V的|焦九龙/升| X9热卖| DDR SDRAM内存- 128MB的内存苏
|
Hynix Semiconductor
http://
Atmel, Corp.
|
| M14D5121632A M14D5121632A-2.5BG M14D5121632A-3BG |
8M x 16 Bit x 4 Banks DDR II SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
