PART |
Description |
Maker |
BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix Vishay Telefunken
|
BF1102 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BF904WR |
N-channel dual-gate MOS-FET
|
NXP Semiconductors Philips Semiconductors
|
BF1105R |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
BF1109WR BF1109 BF1109R |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BF1109 BF1109R BF1109WR |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
3SK295 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
3SK296 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
BF998 BF998R |
Silicon N-channel dual-gate MOS-FETs
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|