| PART |
Description |
Maker |
| MGF1402B |
LOW NOISE GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGF130297 |
LOW NOISE GaAs FET
|
Mitsubishi Electric Semiconductor
|
| SPF-3143Z |
Low Noise pHEMT GaAs FET
|
SIRENZA MICRODEVICES
|
| MGF1907A |
TAPE CARRIER LOW NOISE GaAs FET
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CFB0301_06 CFB0301 CFB030106 |
High Dynamic Range Low Noise GaAs FET
|
MIMIX[Mimix Broadband]
|
| MGF1902B 1902B |
From old datasheet system
TAPE CARRIER LOW NOISE GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NE3521M04-T2B-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
California Eastern Labs
|
| NE3210S01 NE3210S01-T1 NE3210S01-T1B |
Low Noise Amplifier N-Channel HJ-FET(低噪声N沟道结型场效应管) 低噪声放大器N沟道黄建忠场效应管（低噪沟道结型场效应管
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| AD645 AD645S AD645JN AD645SH/883B AD645A |
Low Noise,Low Drift FET OP AMP(低噪低漂FET运算放大
Low Noise, Low Drift FET Op Amp OP-AMP, 1000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDIP8
|
Analog Devices, Inc.
|
| NE713 NE71300-L NE71300-N NECCORP.-NE713 |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
L降至Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC Corp.
|
| SPF-3143Z |
Low Noise pHEMT GaAs FET
|
SIRENZA MICRODEVICES
|
