| PART |
Description |
Maker |
| BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| RQG1004UPAQL RQG1004UP-TL-E |
35 mA, 3.5 V, NPN, SiGe, SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.55 MM HEIGHT, MFPAK-4
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| NESG210833 NESG210833-A NESG210833-T1B NESG210833- |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
NEC
|
| BFP750 |
High Linearity Low Noise SiGe:C NPN RF Transistor
|
Infineon Technologies AG
|
| MCR01MZPJ5R6 MCR01MZPJ823 MCR01MZPJ620 NESG3033M14 |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
| BFP650 BFP65010 |
High Linearity Low Noise SiGe:C NPN RF Transistor
|
Infineon Technologies AG
|
| NESG2021M16 NESG2021M16-A NESG2021M16-T3 NESG2021M |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
California Eastern Labs
|
| NESG2021M16-T3 NESG2021M16-T3-A NESG2021M16 NESG20 |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| THN4301E THN4301U THN4301Z |
SiGe NPN Transistor
|
AUK corp
|
| THN6201E THN6201KF THN6201S THN6201U THN6201Z |
SiGe NPN Transistor
|
AUK corp
|
