| PART |
Description |
Maker |
| 40RIF120W 50RIF120W 40RIF100W 50RIF100W |
V(rrm): 1200V; 40A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers
V(rrm): 1200V; 50A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers
V(rrm): 1000V; 40A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers
V(rrm): 1000V; 50A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers
|
International Rectifier
|
| 7MBR10NE120 |
IGBT(1200V/10A)
|
Fuji Electric
|
| 7MBR10NE120 |
IGBT(1200V/10A)
|
FUJI[Fuji Electric]
|
| 1MBH10D-12009 |
1200V / 10A Molded Package
|
Fuji Electric
|
| D17012 |
Rectifier diode. All purpose high power rectifier diodes, non-controllable rectifiers. Free-wheeling diodes & welding. Vrrm = 1200V, Vrsm = 1300V.
|
USHA India LTD
|
| IRG4PH30 IRG4PH30K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 3.10V，@和VGE \u003d 15V的，集成电路\u003d 10A条）
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
|
| STIP4006 STI2006 STIP3006 STI2506 STIP2506 STIP150 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-66
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1A I(C) | TO-66
|
|
| ISL9R8120S3S ISL9R8120P2 ISL9R8120S3ST ISL9R8120P2 |
8A, 1200V STEALTH DIODE, TO220AC PACKAGE
8A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE
8A, 1200V StealthDiode 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB
8A/ 1200V Stealth Diode
8A, 1200V Stealth⑩ Diode
8A, 1200V Stealth?/a> Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| NTE5548 NTE5541 NTE5545 |
Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current 35A.
Silicon Controlled Rectifier (SCR) 35 Amp
|
NTE[NTE Electronics]
|
| HGT1S5N120BNDS HGT1S5N120BNDS9A |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB
21A, 1200V, NPT Series N-Channel IGBTswith Anti-Parallel Hyperfast Diodes
|
Fairchild Semiconductor
|
| LZ-12H-K LZ-B12HMSE-CHV-UC LZ-B12VMSE-CHV-UC |
POWER RELAY 1 POLE - 1/3/5/10A Medium Load Control LZ Series
|
Lite-On Technology Corporation
Lite-On Technology Corp...
|
