| PART |
Description |
Maker |
| 2SC5245-5 2SC5245-3 2SC5245 |
NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier, OSC Applications
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | SC-70 晶体管|晶体管|叩| 10V的五（巴西）总裁| 30mA的一（c）|SC - 70
|
SANYO
|
| AM29DL320GB70WDF AM29DL320GB120 AM29DL320GT70PCFN |
For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path. 对于新的设计，涉及TSOP封装，S29JL032H会取代Am29DL320G，是厂家推荐的迁移路径
For new designs involving TSOP packages, S29JL032H supercedes Am29DL320G and is the factory-recommended migration path. 2M X 16 FLASH 3V PROM, 70 ns, PBGA63
High Speed CMOS Logic Presettable Synchronous 4-Bit Binary Up/Down Counters 16-CDIP -55 to 125 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
DIODE SCHOTTKY SINGLE 10V 200mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-323 3K/REEL
DIODE SCHOTTKY HEX COMMON-CATHODE 30V 250mW 0.57V-vf 200mA-IFM 30mA-IF 0.7uA-IR DFN1616-6 3K/REEL
|
Advanced Micro Devices
SPANSION LLC
Spansion, Inc.
PROM
Spansion Inc.
|
| ZXTR2012Z ZXTR2012Z-7 |
100V INPUT, 12V 30mA REGULATOR TRANSISTOR
|
Diodes Incorporated
|
| MCH4014 |
RF Transistor 12V 30mA fT=10GHz NPN Single MCPH4
|
ON Semiconductor
|
| 2SC2839 2SC2839D |
HF Amp Applications 高频放大器应
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | SPAK
|
Sanyo Electric Co., Ltd.
Sanken electric
SANYO[Sanyo Semicon Device]
|
| P8-SC-111 P8-PC-111 P8-20P-C QR_P8-20P-C QR_P8-20P |
Ultra-small Rectangular Multi-electrode solderless Connectors for Rack and Panel Applications
CAP CER 56PF 50V C0G 5% 0402
CAP CER 1500PF 10V SL 5% 0402
CAP CER 1800PF 10V SL 5% 0402
CAP CER 2200PF 10V SL 5% 0402
CAP CER 2700PF 10V SL 5% 0402
CAP CER 3300PF 10V SL 5% 0402
CAP CER 47PF 50V C0G 5% 0402
CAP CER 39PF 50V C0G 5% 0402
CAP CER 3900PF 10V SL 5% 0402 超小型矩形多电极焊机架和面板连接器的应用
CAP CER 68PF 50V C0G 5% 0402 超小型矩形多电极焊机架和面板连接器的应用
CAP CER 33PF 50V C0G 5% 0402 超小型矩形多电极焊机架和面板连接器的应用
|
HIROSE[Hirose Electric]
Hirose Electric USA, INC.
HIROSE ELECTRIC Co., Ltd.
|
| 2SC3053 |
150mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. correspond 2SC710
|
Isahaya Electronics Corporation
|
| 2SC506009 |
Power transistor (90 -10V, 3A)
|
Rohm
|
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
| 15GN03CA-TB-E ENA1106A |
RF Transistor 10V, 70mA, fT=1.5GHz, NPN Single CP
|
ON Semiconductor
|
| 55GN01FA ENA1113A |
RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single SSFP
|
ON Semiconductor
|
