PART |
Description |
Maker |
126S 117S 151S 176S |
THYRISTOR/DIODE MODULE, 40A 1200VTHYRISTOR/DIODE MODULE, 40A 1200V; Voltage, Vrrm:1200V; Current, It av:40A; Case style:SEMIPACK 1; Current, It rms 3/8 (9.52mm) Sq. Wirewound Trimmers 3/8in [9.52mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Military Quality at Affordable Prices
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Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
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X4005S8-2.7 X4005S8-2.7A X4005S8-4.5A X4005S8I X40 |
RTC Module With CPU Supervisor 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8 DIODE, STUD 95A 1200VDIODE, STUD 95A 1200V; Voltage, Vrrm:1200V; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Catho THYRISTOR, CAPSULE 600ATHYRISTOR, CAPSULE 600A; Voltage, Vrrm:1200V; Current, It av:600A; Case style:TO-200; Current, It rms:1400A; Current, Itsm:11500A; Voltage, Vgt:2.0V; Current, Igt:200mA; Diameter, External:57.3mm; Length / Thyristor Module; Current, It av:150A; Repetitive Reverse Voltage Max, Vrrm:1600V; Peak Surge Current:1250A; di/dt:100A/ s; Package/Case:G62 Thyristor Diode Module; Repetitive Reverse Voltage Max, Vrrm:1200V; Current Rating:220A
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Intersil, Corp. INTERSIL[Intersil Corporation]
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SC160C SC265D4 SC265D3 SC265D5 SC129D FB150D8 SC16 |
THYRISTOR MODULE|TRIAC TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/2 TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|400V V(DRM)|40A I(T)RMS|TO-208VAR1/4 TRIAC|400V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|150A I(T)RMS|TO-200AB TRIAC|200V V(DRM)|150A I(T)RMS|TO-200AB TRIAC|200V V(DRM)|25A I(T)RMS|TO-220 TRIAC|300V V(DRM)|25A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|25A I(T)RMS|TO-208VAR1/4 TRIAC|200V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|200V V(DRM)|25A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|25A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|100A I(T)RMS|TO-200AB TRIAC|400V V(DRM)|300A I(T)RMS|TO-200VAR50 FUSE 1A FA SMT 1206 TRIAC|200V V(DRM)|300A I(T)RMS|TO-200VAR50 可控硅| 200伏五(DRM)的| 300口(T)的有效值|00VAR50 TRIAC|800V V(DRM)|150A I(T)RMS|STF-M20 可控硅| 800V的五(DRM)的| 150A口(T)的有效值|培训基金- M20 TRIAC|600V V(DRM)|150A I(T)RMS|TO-200AB 可控硅| 600V的五(DRM)的| 150A口(T)的有效值|00AB TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 可控硅| 1.2KV五(DRM)的| 300口(T)的有效值|培训基金,一辆M23 TRIAC|600V V(DRM)|70A I(T)RMS|STF-M12 可控硅| 600V的五(DRM)的|0A口(T)的有效值|培训基金- M12 TRIAC|1.2KV V(DRM)|150A I(T)RMS|STF-M20 可控硅| 1.2KV五(DRM)的| 150A口(T)的有效值|培训基金- M20 TRIAC|200V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 200伏五(DRM)的| 50A条口(T)的有效值|08VARM8
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Cornell Dubilier Electronics, Inc. EPCOS AG SIEMENS AG
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IHW40T120 |
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode IGBTs & DuoPacks - 40A / 1200V IGBT and 18A / 1200V Diode in DuoPack
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Infineon Technologies AG
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X40020V14I-C X40020V14I-B X40020V14I-A |
DIODE, STANDARD, 95A, 400V, STUD; Voltage, Vrrm:400V; Current, If av:95A; Case style:E12; Current, Ifs max:700A; Diode type:Standard recovery; Polarity, diode:Stud Anode; Thread size:M8; Voltage, forward at If:1.5V RoHS Compliant: Yes Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:1600V; Forward Current Avg Rectified, IF(AV):50A; Non Repetitive Forward Surge Current Max, Ifsm:700A; Forward Voltage Max, VF:1.6V; Package/Case:SO-32B DIODE, STUD 50A 1200VDIODE, STUD 50A 1200V; Voltage, Vrrm:1200V; Current, If av:50A; Current, Ifs max:700A; Voltage, forward at If:1.6V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Anode
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Intersil Corporation
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IGW40T120 Q67040-S4519 GW40T120 |
From old datasheet system Low Loss IGBT in Trench and Fieldstop technology IGBTs & DuoPacks - 40A 1200V TO247 IGBT
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INFINEON[Infineon Technologies AG]
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350PEQ50W 350PEQ90W 350PEQ60W 350PEQ110W 350PEQ100 |
V(rrm/drm): 500V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 900V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 600V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 1100V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 1000V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 1200V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 700V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 800V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
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International Rectifier
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CM50DY-24H |
MEDIUM POWER SWITCHING USE INSULATED TYPE 中功率开关使用绝缘型 IGBT Modules:1200V
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Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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MX636JCWET |
True RMS-to-DC Converters RMS TO DC CONVERTER, 0.1 MHz, PDSO16
|
Maxim Integrated Products, Inc.
|
IKW40T120 Q67040-S4520 |
LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE IGBTs & DuoPacks - 40A 1200V TO247 IGBT Diode
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Infineon Technologies A... Infineon Technologies AG
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BTA10-800AW BTA10-200AW BTA10-400AW BTA10-700AW BT |
TRIAC|800V V(DRM)|10A I(T)RMS|TO-220 TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 TRIAC|400V V(DRM)|10A I(T)RMS|TO-220 TRIAC|700V V(DRM)|10A I(T)RMS|TO-220 Transient Voltage Suppressor Diodes 可控硅| 600V的五(DRM)的| 10A条口(T)的有效值|20
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Volex PLC
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