| PART |
Description |
Maker |
| PE15A1008 |
23 dBm IP3, 1.6 dB NF, 13 dBm, 20 MHz to 3 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
| TIM1414-2-252 |
HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| PE15A1005 |
40 dB Gain, 1.5 dB NF, 15 dBm, 1.2 GHz to 1.4 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| TC1953A |
13.75 - 14.5 GHz 21 dBm MMIC
|
Transcom, Inc.
|
| TA050-062-45-27 |
5 - 6.2 GHz 27.5 dBm Amplifier
|
Transcom, Inc.
|
| TA125-160-37-25 |
12.5 - 16 GHz 25 dBm Amplifier
|
Transcom, Inc.
|
| TA075-180-24-12 |
7.5 - 18 GHz 12 dBm Amplifier
|
Transcom, Inc.
|
| TA160-180-25-27 |
16 - 18 GHz 27 dBm Amplifier
|
Transcom, Inc.
|
| TA020-180-20-10 |
2 - 18 GHz 13 dBm Amplifier
|
Transcom, Inc.
|
| TA165-182-32-32 |
16.5 - 18.2 GHz 32 dBm Amplifier
|
Transcom, Inc.
|
| TM020-040-18-24 |
2 - 4 GHz 24 dBm Module
|
Transcom, Inc.
|
|
