| PART |
Description |
Maker |
| IXTQ69N30PM |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| MMIX1T660N04T4 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTN62N50L |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTQ3N150M |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXFH60N60X2A |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| SPA15N60CFD |
CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode
|
Infineon Technologies AG
|
| ZHCS350TC ZHCS350 ZHCS350TA |
High Current Schottky Diode
From old datasheet system
AM29LV081B-120EC 8MBIT FLASH
SOD523 40V LOW VF SCHOTTKY BARRIER DIODE 0.51 A, SILICON, SIGNAL DIODE
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| BAT14 BAT14-03W |
Silicon Schottky Diode
Schottky Diodes - RF Schottky diode for DBS mixer application to 12GHz
|
Infineon Technologies A...
Infineon Technologies AG
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| ZHCS1006 ZHCS1006TA |
SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT?/a>
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ??uperBAT??/td>
| SOT-23
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE B>SuperBAT
DIODE SCHOTTKY SOT-23 肖特基二极管采用SOT - 23
High Current Schottky Diode
|
Fairchild Semiconductor
Zetex Semiconductors
Zetex Semiconductor PLC
|
