| PART |
Description |
Maker |
| IXTA02N250HV |
N-Channel Enhancement Mode Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTT6N150 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| MMIX1F360N15T2 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTA3N120HV |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTH12N150 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTP05N100P IXTA05N100P |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| MMIX1F160N30T |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXFN110N85X |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| SPA15N60CFD |
CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode
|
Infineon Technologies AG
|
| BAS52 BAS52-02V |
Silicon Schottky Diode
Schottky Diodes - Low current rectification and high speed switching Schottky diode
|
Infineon Technologies A...
Infineon Technologies AG
|
| IRF7526D1 IRF7526D1TR |
Co-packaged HEXFETò Power MOSFET and Schottky Diode
FETKYMOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V) FETKY⑩MOSFET
FETKY MOSFET & Schottky Diode(Vdss=-30V Rds(on)=0.20ohm Schottky Vf=0.39V)
FETKY MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)
FETKY⑩ MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
