| PART |
Description |
Maker |
| IR17-21C-TR8 IR17-21C_TR8 IR17-21C/TR8 |
1.4 mm, 1 ELEMENT, INFRARED LED, 940 nm
Infrared Chip LED
|
EVERLIGHT ELECTRONICS CO LTD
Everlight Electronics Co., Ltd
|
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| WP34SF7C |
T-1 (3mm) INFRARED EMITTING DIODE 3 mm, 1 ELEMENT, INFRARED LED, 850 nm
|
Kingbright, Corp.
KINGBRIGHT[Kingbright Corporation]
|
| F5D3 F5D1 F5D2 |
AIGAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
QT[QT Optoelectronics]
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| OP165D |
GaAs Plastic Infrared Emitting Diode(砷化镓塑料红外发光二极管,可替代K6500\OP163系列器件) 3 mm, 1 ELEMENT, INFRARED LED, 935 nm
|
Optek Technology
|
| TLP831 |
PHOTO-INTERRUPTER INFRARED LED PHOTOTRANSISTOR
PHOTOINTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
Toshiba Semiconductor
|
| TLN201 |
INFRARED LED GAA AS INFRARED ENITTER
|
Toshiba Corporation
Toshiba Semiconductor
|
| TLN115A07 TLN115AF TLN115A |
Infrared LED GaAs Infrared Emitter
|
Toshiba Semiconductor
|
| BIR-BO731 BIR-NL7C1 BIR-BM734 BIR-BL734 |
3 mm, 1 ELEMENT, INFRARED LED, 840 nm
5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
American Bright Optoelectronics, Corp.
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
