| PART |
Description |
Maker |
| ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ
0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
| TSDF2020W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| INA-54063-BLK |
3.0 GHz Low Noise Silicon MMIC Amplifier
|
Agilent(Hewlett-Packard...
|
| PHT41410B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
| Q62702-F655 BFQ60 |
LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| AMMC-6231 |
AMMC-6231 · 16-32 GHz Low Noise Amplifier
16?2 GHz Low Noise Amplifier
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| BAT15-04 BAT15_04 Q62702-A504 |
Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) 硅双肖特基二极管（星展混频器应用12 GHz低噪声系数低屏障型）
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| INA-30311 INA-30311-BLK INA-30311-TR1 INA-30311- |
1 GHz Low Noise Silicon MMIC Amplifier
GT 14C 14#16 SKT PLUG
1 GHz的硅单片低噪声放大器
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| Q62702-F1772 BF2000W |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
