PART |
Description |
Maker |
PTGA090304MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W, 48 V, 575 ?960 MHz
|
Cree, Inc
|
PTMC210124MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 12 W, 28 V, 1805 ?2200 MHz
|
Cree, Inc
|
PTMC210404MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W, 28 V, 1805 ?2200 MHz
|
Cree, Inc
|
CGY93P |
GSM 2 stage Power Amplifier MMIC
|
Infineon
|
CGY181 |
PCN/PCS 2 stage Power Amplifier MMIC
|
Infineon
|
BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
0805 1008 T491X226K035AS 100B100JCA500X 100B120JP5 |
RF LDMOS Wideband Integrated Power Amplifiers MW4IC001MR4 W-CDMA 0.8-2.17 GHz, 900 mW, 28 V RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, In... FREESCALE[Freescale Semiconductor, Inc] Motorola
|
BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. UHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF578XR |
Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
MW4IC001MR4 MW4IC001MR406 |
RF LDMOS Wideband Integrated Power Amplifier 800??170 MHz, 900 mW, 28 V W??DMA RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc MOTOROLA
|
LB421-14 |
RF POWER LDMOS TRANSISTOR SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|