| PART |
Description |
Maker |
| TC58BVG2S0HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG2S0HTA00 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG0S3HBAI6 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| M381L6423ETM-LC5 M368L3223ETM-CC5 M368L3223ETM-LC5 |
184pin Unbuffered Module based on 256Mb E-die 64/72-bit ECC/Non ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M378T2953BGZ0-CD5_CC M378T2953BGZ3-CD5_CC M378T335 |
240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M378T6553CZ3-CCC M378T6553CZ3-CD5 M378T6553CZ3-CE6 |
DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC
|
SAMSUNG[Samsung semiconductor]
|
| KMM372F1600BK KMM372F1600BS KMM372F1680BK KMM372F1 |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
|
Samsung Electronic
Samsung semiconductor
|
| KMM372F3200BK3 KMM372F3280BK3 KMM372F400CK KMM372F |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
|
Samsung Electronic
Samsung semiconductor
|
| KMM372C1680BK KMM372C1600BK KMM372C1600BS KMM372C1 |
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| UN2226 0687 UNR2226UN2226 |
UNR2226 (UN2226) - NPN Transistor with built-in Resistor
From old datasheet system
Transistors with built-in Resistor
|
Matsshita / Panasonic
|
| DTD113Z-AL3-6-R DTD113ZL-AE3-6-R DTD114E-AE3-R DTD |
NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) npn型数字晶体管（内置偏压电阻）
DIGITAL TRANSISTORS (BUILT- IN RESISTORS)
DIGITAL TRANSISTORS (BUILT-IN RESISTORS)
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
