| PART |
Description |
Maker |
| BB731S |
Silicon epitaxial planar capacitance diodes with very wide effective capacitance
|
TY Semiconductor Co., Ltd
|
| Z8L18008FEC Z8L18008VEC Z8L18008PEC Z8L18010FSC Z8 |
Microprocessor Unit
Z8018x Family MPU
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:4VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:10uF; Capacitance Tolerance: /- 20%; ESR:2.2ohm; Leaded Process Compatible:Yes; Operating Temp. Max:105 C RoHS Compliant: Yes
CONN RING INSUL 26-24 AWG #8
CONN RING INSUL 26-24 AWG #6
CONN RING INSUL 26-24 AWG #2 8-BIT, MICROPROCESSOR, PDIP64
ENHANCED Z180 MICROPROCESSOR
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:6.8uF; Capacitance
dielectric type:Niobium Oxide; Case style:P; Depth, external:1.5mm; Length / Height, RoHS Compliant: Yes
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:2.5VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:15uF; Capacitance
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:4.7uF; Capacitance
|
ZILOG INC
Zilog Inc.
Zilog.
ZiLOG, Inc.
|
| GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM
3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
Microsemi Corporation
|
| BB204B BB204 BB204G |
ER 35C 35#16 PIN PLUG VHF BAND, 14 pF, SILICON, VARIABLE CAPACITANCE DIODE, TO-92
VHF variable capacitance double diodes 甚高频双可变电容二极
|
PHILIPS[Philips Semiconductors]
Philipss
NXP Semiconductors N.V.
|
| BB664 Q62702-B0909 Q62702-B0908 |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance) 硅变容二极管（甚高频电视信号接收器高电容率低串联电感低串联电阻）
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SGH30N60RUF SGH30N60RUFTU |
Discrete, Short Circuit Rated IGBT
Ceramic Multilayer Capacitor; Capacitance:2200pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:W2F; Features:Feedthru; Leaded Process Compatible:Yes
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| SFH409-2 Q62702-P1001 Q62702-P1002 Q62702-P860 SFH |
From old datasheet system
GaAs Infrared Emitter
Mica Film Capacitor; Capacitance:47pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
CAP MICA 43PF 300V SMD 砷化镓红外发射器
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HVU355B |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| NP0080TAT1G NP0120TAT1G NP0160TAT1G NP0080TA |
Low Voltage Low Capacitance Surge Protection Device
Low Capacitance Protector
|
ON Semiconductor
|
| SCP-5759 |
LOW CAPACITANCE HYPERABRUPT VARACTOR DIODE 1.5 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Sensitron Semiconductor
|
| G8605-25 G8605 G8605-11 G8605-12 G8605-13 G8605-15 |
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 420V; Case Size: 30x40 mm; Packaging: Bulk 铟镓砷PIN光电二极
Aluminum Snap-In Capacitor; Capacitance: 220uF; Voltage: 420V; Case Size: 25x35 mm; Packaging: Bulk 铟镓砷PIN光电二极
Aluminum Snap-In Capacitor; Capacitance: 680uF; Voltage: 420V; Case Size: 35x50 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 220uF; Voltage: 420V; Case Size: 30x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 420V; Case Size: 30x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 420V; Case Size: 35x30 mm; Packaging: Bulk
InGaAs PIN photodiode
|
Hamamatsu Photonics K.K.
HAMAMATSU[Hamamatsu Corporation]
|
