| PART |
Description |
Maker |
| LR324 LR324D |
Internally Frequency Compensated Large Voltage Gain
|
Leshan Radio Company
|
| LR358C LR358 |
Internally Frequency Compensation, Large Voltage Gain
|
LRC[Leshan Radio Company]
|
| ACE358 |
The ACE358 consists of two independent high gain, internally frequency compensated operational amplifier. It can be operated from a Single power supply and also split power supplies.
|
ACE Technology Co., LTD.
|
| MGP20N40CL |
CAP 0.1UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
SMARTDISCRETES Internally Clamped / N-Channel IGBT
SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MGFL45V1920A |
1.9 - 2.0 GHz BAND 32W Internally Matched GaAs FET
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MC44603ADWR2G MC44603APG MC44603ADWG MC44603ADWR2 |
ENHANCED MIXED FREQUENCY MODE GREENLINE TM PWM CONTROLLER:FIXED FREQUENCY, VARIABLE FREQUENCY,STANDBY MODE
|
ONSEMI[ON Semiconductor]
|
| MGFC42V5258 |
5.2-5.8 GHz Band 16W Internally Matched GaAs FET
5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V4450A C394450A |
From old datasheet system
4.4~5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET
4.4 - 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V5258 C365258 |
5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.2~5.8GHZ BAND 4W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MP3H6115AC6U MP3H6115AC6T1 MP3H6115A6T1 MP3H6115A6 |
High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure, On-Chip Signal Conditioned
High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure On-Chip Signal Conditioned, Temperature Compensat
|
FREESCALE[Freescale Semiconductor, Inc]
|
