| PART |
Description |
Maker |
| ULN2005 ULN2003 ULN2003L ULN2005A ULN2005L ULN2003 |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash Memory IC; Memory Size:64Mbit; Access Time, Tacc:90ns; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow
High Voltage / High Current Darlington Transistor Arrays
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
(ULN2001A - ULN2005A) High Voltage / High Current Darlington Arrays
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
List of Unclassifed Man...
Electronic Theatre Controls, Inc.
Sprague Electric
ETC[ETC]
List of Unclassifed Manufacturers
VISHAY SPRAGUE
|
| SZ1.5A330 SZ1.5A220 SZ1.5A240 SZ1.5A270 SZ1.5A300 |
HIGH VOLTAGE ZENER DIODES
240 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
270 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
220 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
330 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
300 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
430 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
470 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
390 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
|
Solid States Devices, Inc
Solid State Devices, Inc.
SOLID STATE DEVICES INC
|
| IR2308 IR2308S |
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-pin DIP package
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-lead SOIC package
|
International Rectifier
|
| IR2113STR IR2110 IR2110S IR2110SPBF IR2113-1 IR211 |
High and Low Side Driver, All High Voltage Pins On One Side, Separate Logic and Power Ground, Shut-Down in a 16-lead SOIC package
High and Low Side Driver, All High Voltage Pins On One Side, Separate Logic and Power Ground, Shut-Down in a 14-pin DIP package
High and Low Side Driver, All High Voltage Pins On One Side, Separate Logic and Power Ground, Shut-Down, High Creepage Package in a 14-pin DIP -1 lead package
High and Low Side Driver, All High Voltage Pins On One Side, Separate Logic and Power Ground, Shut-Down, High Creepage Package in a 16-pin DIP -2 leads package
|
International Rectifier
|
| 801-4 800 800-1 800-2 800-3 800-4 801-1 801-2 801- |
PROFET™: Smart High Side Switches; Package: PG-TO220-5; Channels: 1.0; RON @ Tj = 25°C : 220.0 mOhm; Recommended Operating Voltage Range: 4.7 - 42.0 V; IL(SC): 12.0 A; Diagnostic: digital
PROFET™: Smart High Side Switches; Package: PG-DSO-8; Channels: 1.0; RON @ Tj = 25°C : 200.0 mOhm; Recommended Operating Voltage Range: 6.0 - 52.0 V; IL(SC): 6.5 A; Diagnostic: digital
Voltage Range: 12.0 - 45.0 V; IL(SC): 2.1 A; Diagnostic: n.a.
PROFET™: Smart High Side Switches; Package: PG-SOT223-4; Channels: 1.0; RON @ Tj = 25°C : 1,500.0 mOhm; Recommended Operating Voltage Range: 4.9 - 60.0 V; IL(SC): 0.9 A; Diagnostic: n.a.
RECTIFIERS ASSEMBLIES THREE PHASE BRIDGES, 20-40 AMP, STANDARD HIGH EFFICIENCY, ESP
|
MICROSEMI[Microsemi Corporation]
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| BUL72A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| CAT24FC16RITE13REV-F CAT24FC16JITE13REV-F CAT24FC1 |
CAT5E PATCH CORD 100MHZ 4 FOOT BEIGE
Aluminum Electrolytic SMT General Purpose Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x5 mm; Packaging: Tape & Reel
LM5100/LM5101 High Voltage High Side and Low Side Gate Driver; Package: SOIC NARROW; No of Pins: 8
16-kb I2C Serial EEPROM
16-kb, High Speed, Low Voltage I2C Serial EEPROM
|
CATALYST[Catalyst Semiconductor]
|
| 2N3439CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
|
SemeLAB
SEME-LAB[Seme LAB]
|
| 2N3440CSM4R 2N3439CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
|
SemeLAB
SEME-LAB[Seme LAB]
|
| AUIRS2092S |
Automotive High Voltage, high performance Class D audio aplifier driver with PWM modulator and protection in a 16-Lead SOIC Narrow Package
|
International Rectifier, Corp.
|
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