| PART |
Description |
Maker |
| IDT72V70800 IDT72V70800TF IDT72V70800PF |
512 x 512 Time Slot Interchange Digital Switch, 3.3V
TSI-TDM Switches
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 512 x 512
|
IDT[Integrated Device Technology]
|
| M41T81 |
512 BIT (64 BIT SERIAL ACCESS RTC SRAM WITH ALARMS
|
ST Microelectronics
|
| LC3664RSL-12 LC3664RML-10 LC3664RM-15 LC3664RL-15 |
Access time: 100ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM
Access time: 150ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM
|
SANYO
|
| M41T56M6E M41T56M6F M41T56MH6E M41T56MH6F M41T56 |
512 bit 64b x8 Serial Access TIMEKEEPER SRAM
|
STMicroelectronics
|
| M41T56 M41T56M M41T56MH M41T56SH |
512 bit 64b x8 Serial Access TIMEKEEPER SRAM
|
STMicroelectronics
|
| M41ST85YMH6E M41ST85YMX6 M41ST85YMH6TR M41ST85WMH6 |
512 Kbit (64 Bit x8) Serial Access RTC and NVRAM Supervisor
|
ST Microelectronics
|
| AS7C31025A-20TJI AS7C1025A AS7C1025A-10JC AS7C1025 |
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 20 ns, PDSO32
High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125
Parallel-Load 8-Bit Shift Registers 16-VQFN -40 to 85
Parallel-Load 8-Bit Shift Registers 16-SO -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
High Speed CMOS Logic Quad 2-Input AND Gates 14-TSSOP -55 to 125
Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85
Parallel-Load 8-Bit Shift Registers 16-TSSOP -40 to 85
5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
|
Alliance Semiconductor ...
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| UT62256CLS-35LE UT62256CLS-70LE UT62256CLS-70LLE U |
Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM
Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM
|
UTRON Technology
|
| K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MSM64Q424-NGS-K MSM64422-XXXMS-K MSM64424-XXXMS-K |
Built-in 256/512-Bit EEPROM and LCD Driver 4-Bit Microcontroller 内置256/512-Bit EEPROM和LCD驱动位微控制
|
OKI SEMICONDUCTOR CO., LTD.
|
| IRS21271SPBF IRS21281SPBF IRS2127SPBF |
Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status: Remarks:
Asynchronous SRAM; Organization (word): 1M; Organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status: Remarks:
|
International Rectifier
|
| M93C46-DS3G_S M93C46-DS3G_W M93C46-DS3P_S M93C46-D |
256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
512 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8
1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIREserial access EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE? serial access EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE庐 serial access EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE垄莽 serial access EEPROM
|
意法半导
STMicroelectronics
|
