| PART |
Description |
Maker |
| UT62L5128BS-70LI UT62L5128BS-55LLI UT62L5128BS-55L |
Access time: 70 ns, 512 K x 8 Bit low power CMOS SRAM
Access time: 55 ns, 512 K x 8 Bit low power CMOS SRAM
Access time: 100 ns, 512 K x 8 Bit low power CMOS SRAM
|
UTRON Technology
|
| UT6716455PPX UT6716470PPX UT6716455WCA UT6716470WC |
64K SRAM, 8Kx8. 55ns access time Lead finish optional. Prototype flow.
64K SRAM, 8Kx8. 70ns access time Lead finish optional. Prototype flow.
64K SRAM, 8Kx8. 55ns access time Lead finish solder.
64K SRAM, 8Kx8. 70ns access time Lead finish solder.
64K SRAM, 8Kx8. 85ns access time Lead finish solder.
|
Aeroflex Circuit Technology
|
| MKI41T56 MKI41T56N00 MKI41T56N00TR MKI41T56S00 MKI |
512 bit (64b x8) Serial Access TIMEKEEPER SRAM
From old datasheet system
512 bit (64b x8) Serial Access TIMEKEEPER ? SRAM
512 bit 64b x8 Serial Access TIMEKEEPER SRAM 5124B条x8串行SRAM的访问计时器
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| M41T81 |
512 BIT (64 BIT SERIAL ACCESS RTC SRAM WITH ALARMS
|
ST Microelectronics
|
| TC554001FTL-10V TC554001FTL-85V |
524, 288 words x 8 bit static RAM, access time 100ns
524, 288 words x 8 bit static RAM, access time 85ns
|
TOSHIBA
|
| M41T11MH6E M41T11M6E M41T11MH6TR M41T11M6F |
512 Bit (64B X8) Serial Access TIMEKEEPER SRAM
|
ST Microelectronics
|
| M41T56 M41T56M M41T56MH M41T56SH |
512 bit 64b x8 Serial Access TIMEKEEPER SRAM
|
ST Microelectronics
|
| A67L7332SERIES A67L7336SERIES A67L8316SERIES A67L8 |
Cycle time:7ns; access time:4.5ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4.2ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4ns; 128K x 32 LVTTL, pipelined DBA SRAM
256K X 16/18. 128K X 32/36 LVTTL. Pipelined DBA SRAM 256 × 16/18128K的X 32/36 LVTTL等级。流水线数据库管理员的SRAM
256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
Cycle time:7ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:7.5ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:8.5ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
|
AMIC Technology, Corp.
|
| UPB100422D-10 UPB100422B-10 |
256 x 4-bit 100K ECL RAM. Access time(max) 10 ns.
|
NEC
|
| R1LP0408C R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408 |
Wide Temperature Range Version 4 M SRAM (512-kword ??8-bit)
R1LP0408C-I Series Datasheet 78K/AUG.01.03
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Renesas
|
