| PART |
Description |
Maker |
| A29002V-100 A29002-70 A29002L-70 A29002V-70 A29002 |
110ns 20mA 256K x 8bit CMOS 5.0V-only
70ns 20mA 256K x 8bit CMOS 5.0V-only
100ns 20mA 256K x 8bit CMOS 5.0V-only
120ns 20mA 256K x 8bit CMOS 5.0V-only
150ns 20mA 256K x 8bit CMOS 5.0V-only
90ns 20mA 256K x 8bit CMOS 5.0V-only
55ns 20mA 256K x 8bit CMOS 5.0V-only
|
AMIC Technology
|
| BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV202 |
10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable
Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MB81V4265-70 |
CMOS 256K ×16BIT
Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
| MBM29LV400BC-12PCV MBM29LV400BC-12PF MBM29LV400BC- |
4M (512K X 8/256K X 16) BIT 256K X 16 FLASH 3V PROM, 90 ns, PBGA48
4M (512K X 8/256K X 16) BIT 256K X 16 FLASH 3V PROM, 70 ns, PDSO48
LED Lamp; LED Color:Blue; Luminous Intensity:85mcd; Viewing Angle:120 ; Forward Current:20mA; Forward Voltage:3.5V; Operating Temperature Range:-40 C to 85 C; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
LED Lamp; Bulb Size:1.8mm; LED Color:Yellow; Luminous Intensity:625ucd; Viewing Angle:30 ; Forward Current:20mA; Forward Voltage:2.1V; Operating Temperature Range:-40 C to C; Color:Yellow; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
Fujitsu, Ltd.
Fujitsu Limited
http://
Fujitsu Component Limited.
Fujitsu Component Limit...
|
| NM27C020 NM27C020QE150 |
2 Meg (256k x 8) UV Erasable CMOS EPROM [Life-time buy]
2097152-Bit (256K x 8) UV Erasable CMOS EPROM
2,097,152-Bit (256K x 8) UV Erasable CMOS EPROM
2 /097 /152-Bit (256K x 8) UV Erasable CMOS EPROM
|
FAIRCHILD[Fairchild Semiconductor]
|
| V62C2164096 V62C2164096LL-70T |
256K X 16 STANDARD SRAM, 70 ns, PDSO44
256K x 16 0.17 um CMOS STATIC RAM
256K x 16, 0.17 um CMOS STATIC RAM
|
MOSEL-VITELIC
MOSEL[Mosel Vitelic Corp]
MOSEL[Mosel Vitelic, Corp]
|
| 24LC256ESM 24LC256IP 24LC256ISM 24LC256EP 24AA256 |
256K I2C CMOS EEPROM
256K I 2 C CMOS Serial EEPROM 256K的I 2 C⑩的CMOS串行EEPROM
256KI2CCMOSSerialEEPROM
|
Microchip Technology, Inc.
Microchip Technology Inc.
MicrochipTechnology
|
| LH532600 LH532600N LH532600D LH532600T LH532600TR |
CMOS 2M(256K X 8/128K X 16) Mask-Programmable ROM
CMOS 2M (256K x 8/128K x 16) MROM
|
SHARP[Sharp Electrionic Components]
Sharp Corporation
|
| 27C4096-12 27C4096-10 |
4M-BIT [512K x 8/256K x 16] CMOS EPROM 4分位[12k × 8/256K × 16]的CMOS存储
|
Macronix International Co., Ltd.
|
