| PART |
Description |
Maker |
| CFB1063 CFB1063P CFD1499Q |
2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 200 hFE. Complementary CFD1499
2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 100 - 200 hFE. Complementary CFD1499P
2.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 120 hFE. Complementary CFB1063Q
|
Continental Device India Limited
|
| CSA1162Y-3E CSA1162 CSA1162GR_G-3F CSA1162GRG-3F C |
0.150W Low Frequency PNP SMD Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE. Complementary CSC2712
LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23
晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一c）| SOT - 23封装
|
CDIL[Continental Device India Limited]
|
| 2SA1897L 2SA1897 2SA1897K |
20 V, 5 A, PNP ultra-low saturation voltage transistor
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
|
NEC[NEC]
|
| 2SB1628 2SB1628ZX 2SB1628-ZX-AZ |
3 A, 16 V, PNP, Si, POWER TRANSISTOR
3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits
Low-VCE(sat) bipolar transistor
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
|
Omron Electronics, LLC
NEC Corp.
|
| CSB1272 |
10.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 1000 - 10000 hFE.
|
Continental Device India Limited
|
| CFA1535Q |
15.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 1.000A Ic, 95 - 155 hFE. Complementary CFC3944Q
|
Continental Device India Limited
|
| CFA1046Y |
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CFC2026Y
|
Continental Device India Limited
|
| MMBT1015-GR-AN3-R MMBT1015-GR-AL3-R MMBT1015-BL-AN |
LOW FREQUENCY PNP AMPLIFIER TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
|
| SS9015 S9015 |
PNP (LOW FREQUENCY / LOW NOISE AMPLIFIER)
PNP (LOW FREQUENCY, LOW NOISE AMPLIFIER)
|
SAMSUNG[Samsung semiconductor]
|
| CJF15031 CJF15030 |
36.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 40 hFE.
36.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 20 hFE.
|
Continental Device India Limited
|
| 2SA1048L |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Audio Frequency Applications
|
TOSHIBA
|
