| PART |
Description |
Maker |
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| W5232 W523X W5231 W5233 W5234 |
Power Speech LOW VOLTAGE ADPCM VOICE SYNTHESIZER
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (6 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (12 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (9 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (3 seconds @6.7K)
|
WINBOND[Winbond]
Winbond Electronics
|
| IS42S32800B-7T IS42S32800B-6T IS42S32800B-6BI IS42 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
| IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42 |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
|
| IS42S32800B-6BL IS42S32800B-6BI |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
|
http://
|
| AM50DL128CG |
2 x 64 Mbit (8 M x 8-Bit/4 M x 16-Bit) CMOS and 64 Mbit (2 M x 16-Bit) Pseudo Static RAM (Preliminar
From old datasheet system
|
AMD Inc
|
| DD28F032SA DD28F032SA-080 DD28F032SA-070 DD28F032S |
32-MBIT (2 MBIT X 16/ 4 MBIT X 8) FlashFile MEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFileMEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY 4M X 8 FLASH 12V PROM, 100 ns, PDSO56
|
Intel Corporation
Intel Corp.
PROM
Intel, Corp.
|
| GM76C8128CL-55 GM76C8128CLLI-55 GM76C8128CLL-85 GM |
131,072 words x 8 bit CMOS static RAM, 55ns
131,072 words x 8 bit CMOS static RAM, low power, 55ns
131,072 words x 8 bit CMOS static RAM, low power, 85ns
131,072 words x 8 bit CMOS static RAM, 70ns
|
LG Semiconductor
|
| HY51V17403HGJ-5 HY51V17403HGJ-6 HY51V17403HGJ-7 HY |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
|
Hynix Semiconductor
|
| IS42S16100A1-10T |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
|
Integrated Silicon Solution, Inc.
|
| MSM538052E MSM538052E-XXGS-K MSM538052E-XXRS MSM53 |
524,288-Words x 16-bit or 1,048,576-Bytes x 8-bit MaskROM, 8Words x 16-Bit or 16Bytes x 8-Bit/Page Mode MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
|
| IS42S32160A IS42S32160A-75B IS42S32160A-75BI IS42S |
4M Words x 32 Bits x 4 Banks (512-MBIT) SYNCHRONOUS DYNAMIC RAM
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Integrated Silicon Solution, Inc
天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
|
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