PART |
Description |
Maker |
DN200 |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
DP030U |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
DP030 |
-300 mA, PNP silicon transistor Extremely low collector-to-emitter saturation voltage
|
AUK[AUK corp] KODENSHI KOREA CORP.
|
DN500P |
Extremely low collector-to-emitter saturation voltage NPN Silicon Transistor
|
KODENSHI KOREA CORP. AUK corp
|
PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET From old datasheet system mTrenchMOS extremely low level FET
|
Philips
|
2SB1537 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
KSB1151 KSB1151YS KSB1151YSTSSTU KSB1151YSTSTU KSB |
Low Collector-Emitter Saturation Voltage Large Collector Current PNP Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
PC895 PC875 PC865 |
From old datasheet system High Sensitivity, Low Collector Dark Current, High Collector-emitter Voltage Type Photocoupler
|
SHARP[Sharp Electrionic Components]
|
PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET DUAL N-CHANNEL UTRENCHMOS EXTREMELY LOW LEVEL FET
|
NXP Semiconductors Philips Semiconductors
|
PMGD370XN |
Dual N-channel uTrenchmos (tm) extremely low level FET Dual N-channel mTrenchMOS-TM extremely low level FET
|
Philips Semiconductors
|
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic
|
USHA India LTD
|