| PART |
Description |
Maker |
| FDP18N20F FDPF18N20FT |
N-Channel UniFETTM FRFETMOSFET 200V, 18A, 140m
N-Channel MOSFET 200V, 18A, 0.14楼?
N-Channel MOSFET 200V, 18A, 0.14Ω
|
Fairchild Semiconductor
|
| FQD10N20 FQU10N20 FQP10N20 FQ10N20 FQD10N20TM FQU1 |
200V N-Channel MOSFET
CAP 3900PF 50V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
200 N-Channel MOSFET
200V N-Channel QFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| IRF9240 |
CAP CER 250VAC 100PF X7R 1808 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
-11A, -200V, 0.500 Ohm, P-Channel Power MOSFET
-11A -200V 0.500 Ohm P-Channel Power MOSFET
11A/ -200V/ 0.500 Ohm/ P-Channel Power MOSFET
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRF630S 6059 |
From old datasheet system
N - CHANNEL 200V - 0.35 -9A-D 2 PAK MESH OVERLAY TM MOSFET
N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET
N - CHANNEL 200V - 0.35 Ohm -9A-D 2 PAK MESH OVERLAY MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| IRF240 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
HEXFET?TRANSISTORS 200V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED
|
IRF[International Rectifier]
|
| FQI10N20 FQB10N20 FQB10N20TM |
200V N-Channel QFET
200V N-Channel MOSFET
CAP 2200PF 100V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
|
http://
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| IRF610B IRF610BFP001 |
200V N-Channel B-FET / Substitute of IRF610 & IRF610A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQA32N20C |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQD18N20V2 FQU18N20V2 FQD18N20V2TF FQD18N20V2TM FQ |
200V N-Channel Advanced QFET V2 series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI19N20C FQB19N20C FQB19N20CTM |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A)
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
