PART |
Description |
Maker |
2SC2411 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
BFR93 |
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体 NPN 5 GHz wideband transistor
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
BFS17W |
NPN 1GHz wideband transistor(NPN 1G赫兹 宽带晶体 NPN 1 GHz wideband transistor
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
BFG541 |
NPN 9 GHz wideband transistor NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
|
NXP Semiconductors Philips Semiconductors
|
BFU580Q |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
BFU580G |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
BFU550A |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
BFU660F |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
BFU520XR BFU520XR-15 |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
BFU760F BFU760F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
ESDA14V2-2BF ESDA14V2-2BF3 ESDA14V2-2BX |
Quad bidirectional Transi array for ESD protection
|
STMicroelectronics
|