PART |
Description |
Maker |
TH50VSF4682AASB TH50VSF4683AASB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
TH50VSF3582AASB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
585-3211 585-3213 585-3215 585-3221 585-3225 585-3 |
Multi-Chip BASED LED T1 3/4 Bi-Pin 585 SERIES BASED LEDs-MULTI-CHIP SINGLE COLOR DISPLAY CLUSTER, RED, 5.9 mm
|
Dialight Corporation Dialight PLC
|
585-2325 585-2225 585-2211 585-2413 585-2415 585-2 |
Multi-Chip BASED LED T 1 3/4 Wedge BASED LEDs-MULTI-CHIP SINGLE COLOR DISPLAY CLUSTER, RED, 5.9 mm
|
Dialight Corporation Dialight PLC
|
TPCP8J0107 |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
|
Toshiba Semiconductor
|
P1200SL P2000SL |
LCAS Asymmetrical Discrete Device
|
Littelfuse
|
CYM1841BPZ-20C CYM1841BPZ-45C CYM1841BP7-15C CYM18 |
256K X 32 MULTI DEVICE SRAM MODULE, 35 ns, SMA64 PLASTIC, SIMM-64 256K X 32 MULTI DEVICE SRAM MODULE, 45 ns, SMA64 PLASTIC, SIMM-64 256K X 32 MULTI DEVICE SRAM MODULE, 15 ns, SMA64 PLASTIC, SIMM-64 256K X 32 MULTI DEVICE SRAM MODULE, 25 ns, SMA64 PLASTIC, SIMM-64 256K X 32 MULTI DEVICE SRAM MODULE, 20 ns, SMA72 PLASTIC, SIMM-72 256K x 32 Static RAM Module
|
Cypress Semiconductor, Corp.
|
WS128K32V-35HS WS128K32V-35HC |
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, HIP66 512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66
|
WHITE ELECTRONIC DESIGNS CORP
|
MT2LSYT3272B2G-12L MT4LSYT6472B2G-12L |
32K X 72 MULTI DEVICE SRAM MODULE, 12 ns, DMA160 64K X 72 MULTI DEVICE SRAM MODULE, 12 ns, DMA160
|
RECOM Electronic GmbH
|
SYS32512ZK-010 SYS32512ZK-012 SYS32512ZK-015 SYS32 |
512 K x 32 Static RAM 512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, PZMA72 PLASTIC, ZIP-72 512K X 32 MULTI DEVICE SRAM MODULE, 10 ns, PZMA72 PLASTIC, ZIP-72 512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, PSMA72 PLASTIC, SIMM-72 512K X 32 MULTI DEVICE SRAM MODULE, 10 ns, PSMA72 PLASTIC, SIMM-72 512 K x 32 Static RAM 512亩32静态RAM
|
Amphenol, Corp. MOSAIC http:// Fujitsu, Ltd. NXP Semiconductors N.V.
|
CS201212-5R6K CS201212-4R7K CS201212-R15K CS201212 |
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 5600000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 4700000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 150000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 3300000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 820000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 680000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 180000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 68000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 33000000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
|
|