| PART |
Description |
Maker |
| MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola Semiconductor
Motorola, Inc.
|
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| MTP5N20 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
| MRF1511N |
RF Power Field Effect Transistor
|
Freescale Semiconductor...
|
| MRF1517T1 |
RF Power Field Effect Transistor
|
Freescale Semiconductor...
FREESCALE[Freescale Semiconductor, Inc]
|
| MTP12N10L |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
| MRF1517NT1 |
RF Power Field Effect Transistor
|
FREESCALE[Freescale Semiconductor, Inc]
|
| CMT02N60GN252 CMT02N60XN252 CMT02N6010 CMT02N60GN2 |
POWER FIELD EFFECT TRANSISTOR
|
Champion Microelectronic Corp.
Champion Microelectronic Co...
Champion Microelectroni...
|
| MTM25N10 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
| MTP15N05E |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
