| PART |
Description |
Maker |
| FDB035AN06A0 FDB035AN06A0NL |
N-Channel PowerTrench MOSFET 60V/ 80A/ 3.5m
N-Channel PowerTrench MOSFET 60V, 80A, 3.5mз
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 0.0035 Ohms @ VGS = 10V, TO-263/D2PAK Package
N-Channel PowerTrench MOSFET 60V, 80A, 3.5mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SJ296 2SJ296S 2SJ296L |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB
Silicon P-Channel MOS FET(P沟道MOSFET) 硅P沟道场效应晶体管性（P沟道MOSFET的）
|
Hitachi,Ltd.
|
| RJF0609JSP RJF0609JSP-15 |
60V - 1.5V Silicon N Channel Thermal FET Power Switching
|
Renesas Electronics Corporation
|
| NDT2955 NDT2955J23Z |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 2.5AI（四）|的SOT - 223
P-Channel Enhancement Mode Field Effect Transistor2.5A60V.3ΩP沟道增强型场效应管（漏电2.5A, 漏源电压-60V，导通电.3Ω
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| STD12NE06L STD12NE06L-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251AA 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 12A条（丁）|51AA
N - CHANNEL 60V - 0.09ohm- 12A TO-251/TO-252 STripFET POWER MOSFET
N-CHANNEL POWER MOSFET
|
California Eastern Laboratories, Inc.
STMicroelectronics
ST Microelectronics
|
| FDB070AN06F085 |
N-Channel PowerTrenchMOSFET 60V, 80A, 7m
N-Channel PowerTrench? MOSFET 60V, 80A, 7mΩ
|
Fairchild Semiconductor
|
| FQT13N06 FQT13N06TF |
60V N-Channel MOSFET
60V N-Channel QFET
|
http://
Fairchild Semiconductor
|
| FQB47P06 FQI47P06 FQB47P06TMAM002 FQI47P06TU |
60V P-Channel MOSFET
60V P-Channel QFET
|
Fairchild Semiconductor Corporation
|
| FQI85N06 FQB85N06 FQB85N06TMAM002 |
60V N-Channel QFET
60V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQD13N06 FQD13N06TF FQD13N06TM FQU13N06 FQU13N06TU |
60V N-Channel QFET
60V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI55N06 FQB55N06 FQB55N06TM |
60V N-Channel QFET
60V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
