| PART |
Description |
Maker |
| L12016-1630T-C L12005-1900H-C L12007-1294H-C L1201 |
Quantum Cascade Laser
|
Hamamatsu Corporation
|
| LD808-2-TO3 |
Output Power: 2.0w(CW) Variety of stripe width Efficient quantum well structure
|
Roithner LaserTechnik GmbH
|
| LD808-5-TO3 |
Output power5.0w(CW) Variety of stripe width Efficient quantum well structure
|
Roithner LaserTechnik GmbH
|
| EQ-432L |
EQ-432L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| EQ-433L |
EQ-433L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| EQ-430L |
EQ-430L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| LDM-0980-300M-92 |
CW Output Power: 300 mW Typical 975 nm Emission Wavelength High-effciency Quantum Well Structure TO5 Package
|
Roithner LaserTechnik GmbH
|
| STK11C88-3 STK11C88-3N45 STK11C88-3N45I STK11C88-3 |
Quadruple 2-Input Exclusive-OR Gates 16-PDIP -40 to 85 32K的8非易失性SRAM 3.3伏量子端粒酶的CMOS非易失静态RAM
32K X 8 NVSRAM 3.3 V QUANTUM TRAP CMOS NONVOLATILE STATIC RAM
|
List of Unclassifed Manufacturers
Simtek
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| PD8931 PD8001 |
High quantum effciency, Very small dark current, High speed response
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| STK12C68-W45I STK12C68 STK12C68-C20 STK12C68-C20I |
8K X 8 NON-VOLATILE SRAM, 22 ns, PDIP28
8k x 8 AUTOSTORE NVSRAM QUANTUM TRAP CMOS NONVOLATILE STATIC RAM 8K的8自动存储非易失性SRAM量子端粒酶的CMOS非易失静态RAM
8K x 8 AutoStore nvSRAM QuantumTrap CMOS Nonvolatile Static RAM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
SIMTEK
|
