PART |
Description |
Maker |
1SS370 E000291 |
From old datasheet system DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS) DIODE (HIGH VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching Latest Silicon Discretes - Switching Diode for high speed switching Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
2SC4157 E000909 |
From old datasheet system NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
2SC5353 EE08169 |
From old datasheet system SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
BAS40-07W BAS4007W |
Silicon Schottky Diode Preliminary data (General-purpose diode for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
RM900DB-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
RM600DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
RM1200DB-34S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
1SS397 |
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|