PART |
Description |
Maker |
ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA |
60 MHz in-system prommable high density PLD 170 MHz in-system prommable high density PLD 125 MHz in-system prommable high density PLD 100 MHz in-system prommable high density PLD Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Number of Pairs:4 RoHS Compliant: Yes In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
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LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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MVAC250-24AFD MVAC-COVER |
250W 3 x 5 High Density AC-DC Power Supply Converter 250 Watt Silicon Type Metal Package Power Transistor 250W 3 x 5 High Density AC-DC Power Supply Converter
|
Murata Power Solutions ...
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ISPLSI2096VE-100LT128 ISPLSI2096VE-135LT128 ISPLSI |
3.3V In-System Programmable SuperFAST?/a> High Density PLD CRYSTAL 24.0 MHZ 20PF SMD 3.3V In-System Programmable SuperFASTHigh Density PLD 3.3V In-System Programmable SuperFAST High Density PLD 3.3V In-System Programmable SuperFAST⑩ High Density PLD 3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
|
Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
|
STP40N03L-20 4886 |
From old datasheet system N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
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ST Microelectronics STMicroelectronics
|
STP38N06 3645 |
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
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STMICROELECTRONICS[STMicroelectronics]
|
ISPLSI1016EA ISPLSI1016EA-100LJ44 ISPLSI1016EA-100 |
125 MHz in-system prommable high density PLD 100 MHz in-system prommable high density PLD In-System Programmable High Density PLD 200 MHz in-system prommable high density PLD
|
Lattice Semiconductor
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
ARF150 |
High power density
|
Ohmite Mfg. Co.
|
ATV2500H ATV2500H-25DC ATV2500H-25DI ATV2500H-25DM |
120 OHM 1% 1/8 W High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CDIP40 High-Density UV-Erasable Programmable Logic Device OT PLD, 35 ns, PQCC44 High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CQCC44 High-Density UV-Erasable Programmable Logic Device OT PLD, 30 ns, PDIP40 High-Density UV-Erasable Programmable Logic Device UV PLD, 30 ns, CQCC44
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ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
|
HDS800 HDS800PS15 HDS800PS24 HDS800PS30 HDS800PS36 |
1U Profile, High Power Density
|
XP Power Limited
|
ISPLSI2032VL ISPLSI2032VL-110LB49 ISPLSI2032VL-110 |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD 2.5V In-System Programmable SuperFAST⑩ High Density PLD 2.5V In-System Programmable SuperFAST High Density PLD 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP48 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP44 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP44 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 5 ns, PQCC44 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 5 ns, PQFP44
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LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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