| PART |
Description |
Maker |
| CMH08 |
High efficiency diode (HED)
|
TOSHIBA
|
| 16FL2C41A |
HIGH EFFICIENCY DIODE STACK (HED)
|
TOSHIBA
|
| 10JL2CZ47 |
HIGH EFFICIENCY DIODE STACK (HED)
|
TOSHIBA
|
| 16FL2CZ47A 16DL2CZ47A |
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 20JL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION
|
TOSHIBA
|
| 30JL2C41 |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION
|
TOSHIBA
|
| 20DL2CZ51A 20FL2CZ51A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION
|
TOSHIBA
|
| 5DL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
|
TOSHIBA
|
| RBQ30T65AFH |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101)
|
ROHM
|
| RBQ30T45AFH |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101)
|
ROHM
|
| EGP10A- EGP10K EGP10A EGP10B EGP10C EGP10D EGP10F |
-1.0 Ampere Glass Passivated High Efficiency Rectifiers
1.0 Ampere Glass Passivated High Efficiency Rectifiers(平均整流电流1.0安培高效率玻璃钝化整流器) 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
