| PART |
Description |
Maker |
| MMZ09312B MMZ09312B12 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
| MMG3002NT112 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
| MMG3008NT1 |
Heterojunction Bipolar Transistor(InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MMG3007NT1 |
Heterojunction Bipolar Transistor(InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MT3S113P |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|
| MMG3004NT1 MMG3004NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMZ25332BT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMG3012NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MMG3003NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MMG3H21NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier
|
Freescale Semiconductor, Inc
|
| BFP740 |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| IMZ2A |
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
|
Pan Jit International Inc.
|
