| PART |
Description |
Maker |
| BUK9635-55A BUK9535-55A |
Product Description:Tantulum Chip Kit
TrenchMOS transistor standard level FET
TrenchMOS(tm) transistor Logic level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BUK9628-100A BUK9528-100A NXPSEMICONDUCTORS-BUK962 |
TrenchMOS transistor Logic level FET 49 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TrenchMOS(tm) transistor Logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BUK7535-55 |
TrenchMOS transistor Standard level FET
TrenchMOS transistor Standard level FET 34 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| BUK7605-30A BUK7605-30A_2 |
TrenchMOS transistor Standard level FET
TrenchMOS TM transistor
From old datasheet system
TrenchMOS(tm) transistor Standard level FET
|
NXP Semiconductors
Philips
|
| BUK9616-55A BUK9516-55A |
TrenchMOS(tm) transistor Logic level FET
TrenchMOS transistor standard level FET
TrenchMOS TM transistor Logic level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| MTP1N100E_D ON2558 MTP1N100E MTP1N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM
|
ON Semiconductor
Motorola, Inc
|
| MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor
Motorola, Inc
|
| MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
|
| BUK9635-100A BUK9635-100A_1 |
TrenchMOS? transistor Logic level FET
From old datasheet system
TrenchMOS transistor Logic level FET
TrenchMOS(tm) transistor Logic level FET
|
NXP Semiconductors
Philips Semiconductors
|
| MTD3N25E MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(ON) = 0.075 OHM
From old datasheet system
|
ON Semiconductor
ETC
Motorola, Inc
|
