| PART |
Description |
Maker |
| BR1000 BR1010 BR1001 BR1002 BR1004 BR1006 BR1008 |
SILICON BRIDGE RECTIFIERS 硅桥式整流器
MOSFET P-CH 500V 8A TO-247AD
MOSFET P-CH 600V 10A TO-247AD
MOSFET P-CH 500V 7A TO-247AD
MOSFET P-CH 500V 11A TO-247AD
MOSFET N-CH 600V 20A TO-247AD
|
EIC discrete Semiconduc...
Electronics Industry Public Company Limited
EIC[EIC discrete Semiconductors]
|
| APT5010JN APT5012JN APT5012 |
POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N沟道增强型高压功率MOSFET
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| 2SA1807 A5800342 2SA1807TLN 2SA1862TLP 2SA1807TLP |
High-Voltage Switching Transistor (Telephone, Power Supply) (-600V, -1A)
High-Voltage Switching Transistor (Telephone power supply) (-600V, -1A)
From old datasheet system
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 2A I(C) | TO-252VAR
TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 1A I(C) | TO-252VAR 晶体管|晶体管|进步党| 600V的五（巴西）总裁| 1A条一（c）|52VAR
|
ROHM[Rohm]
Rohm Co., Ltd.
|
| FMMT560QTC FMMT560QTA |
500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23
|
Diodes
|
| FZT560QTA FZT560TC FZT560TA FZT560QTC |
500V PNP HIGH VOLTAGE TRANSISTOR IN SOT223
|
Diodes Incorporated
|
| FMMT459_05 459 FMMT459 FMMT459TA FMMT459TC |
500V Silicon NPN high voltage switching transistor
|
ZETEX[Zetex Semiconductors]
|
| IRSM505-065-15 |
500V 3-phase inverter including high voltage gate drivers
|
International Rectifier
|
| SML50W40 |
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):40A,Rds(on):0.12惟)(N娌??澧?己??楂???????OS?烘?搴??(Vdss:500V,Id(cont):40A,Rds(on):0.12惟))
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
SEME-LAB[Seme LAB]
SemeLAB
|
| M81721FP |
600V HIGH VOLTAGE HALF BRIDGE DRIVER
|
Mitsubishi Electric Semiconductor
|
| 93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP |
2K 5.0V Automotive Temperature Microwire Serial EEPROM
2K 5.0V Automotive Temperature Microwire Serial EEPROM
Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V
IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
|
Microchip Technology Inc.
|
| FS3UM-10 FS3UM |
Power MOSFETs: FS Series, Medium Voltage, 500V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| CDEP135BMENP-0R55M |
POWER INDUCTORS
Ceramic Conformally Coated/Radial High Voltage “Gold Max"; Capacitance: 1pF; Voltage: 500V; Tolerance: ±20%; TC: C0G; Body Size: .370" (9.40) x .300" (7.62) x .250" (6.35); Lead Style: .275" (6.98)
|
SUMIDA CORPORATION.
|
