| PART |
Description |
Maker |
| EVAL-ADG936EB ADG936 ADG936BCP ADG936BCP-500RL7 AD |
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT 宽带4千兆赫，36千兆赫的CMOS 1.65 V分贝.75 V的隔离，双路SPDT
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, QCC20
|
AD[Analog Devices]
Analog Devices, Inc.
ANALOG DEVICES INC
|
| ADL5802 ADL5802-EVALZ ADL5802ACPZ-R7 ADL580209 |
Dual Channel, High IP3, 100 MHz to 6 GHz Active Mixer
Dual Channel High IP3 100 MHz – 6 GHz Active Mixer; No of Pins: 24 100 MHz - 6000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER
|
Analog Devices, Inc.
|
| HMC682LP6C HMC682LP6CE |
HIGH IP3 DUAL CHANNEL DOWNCONVERTER w/ LO SWITCH, 1.7 - 2.2 GHz
|
Hittite Microwave Corporation
|
| MAX2023 MAX2021 MAX2059 MAX2059ETL MAXIMINTEGRATED |
1700MHz to 2200MHz High-Linearity, SPI-Controlled DVGA with Integrated Loopback Mixer
|
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| MAX2058 MAX2058ETL MAX2058ETLT MAX2058EVKIT |
700MHz to 1200MHz High-Linearity, SPI-Controlled DVGA with Integrated Loopback Mixer
|
MAXIM - Dallas Semiconductor
|
| HMC818LP4E |
GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
|
Hittite Microwave Corporation
|
| HMC818LP4E10 |
GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
|
Hittite Microwave Corporation
|
| RMPA2550 |
2.4-2.5 GHz and 5.15-5.85 GHz Dual Band InGaP HBT Linear Power Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD [Fairchild Semiconductor]
|
| UPG2162T5N UPG2162T5N-E2-A |
DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN
|
California Eastern Labs
|
| ADG936BCP-R-500RL7 ADG936BCP-R-REEL ADG936BRU-REEL |
Wideband 4 GHz 36 dB Isolation at 1 GHz CMOS 1.65 V to 2.75 V Dual SPDT
|
Analog Devices
|
| AGR21180EF |
180 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR21060E AGR21060EF AGR21060EU |
60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
