| PART |
Description |
Maker |
| SFH6319 SFH6318 |
From old datasheet system
LOW CURRENT HIGH GAIN OPTOCOUPLER
LOW CURRENT, HIGH GAIN OPTOCOUPLER
LOW CURRENT / HIGH GAIN OPTOCOUPLER
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BCP49 Q62702-C2137 BCP29 Q62702-C2136 |
From old datasheet system
NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
|
SIEMENS[Siemens Semiconductor Group]
|
| BDP948 BDP950 Q62702-D1338 Q62702-D1336 |
From old datasheet system
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
SIEMENS A G
|
| BDP951 BDP955 BDP953 Q62702-D1343 Q62702-D1339 Q62 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) NPN硅自动对焦功率晶体管输出级驱动器和高集电极电流高电流增益（为自动
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BC618 BC617 Q62702-C1138 Q62702-C1137 |
From old datasheet system
NPN Silicon Darlington Transistors (High current gain High collector current) 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦（高电流增益高集电极电流低集电极发射极饱和电压）
|
Siemens Semiconductor G...
Diotec Elektronische
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 6N138 6N139 |
LOW INPUT CURRENT/ HIGH GAIN OPTOCOUPLER
LOW INPUT CURRENT, HIGH GAIN OPTOCOUPLER
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| KC808 |
High collector current, High current gain.
|
TY Semiconductor Co., Ltd
|
| SFH6318T SFH6319T |
High Speed Optocoupler, 100 kBd, Low Input Current, High Gain
|
Vishay Siliconix
|
| 2SC3072 |
High DC current gain. Low collector saturation voltage. High power dissipation.
|
TY Semiconductor Co., Ltd
|
| HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160
QUAD 2-INPUT NOR GATE
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
