| PART |
Description |
Maker |
| EC30AL32-5.36MH EC30AL30-1.87MH EC30AL31-3.83MH EC |
1 ELEMENT, 5360 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1870 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3830 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4020 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3240 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1430000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 118000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2490 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 53600 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 19600 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 24300 uH, GENERAL PURPOSE INDUCTOR
|
|
| PS27-30 PS28-D-40 PS28-D-31 PS28-D-13 PS28-D-16 P9 |
1 ELEMENT, 1500000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 500000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 17500000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 86000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 860000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 12000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 300000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 150000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 400000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 43000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 17500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 20000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 30000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7200 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 50000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
|
Yageo, Corp.
|
| BCP51 BCP53 BCP52-10 BCP53-10 BCP53-16 BCP51-10 BC |
PNP Silicon AF Transistors
General Purpose Transistors - SOT223; VCEO=45V; hFE=63..160
General Purpose Transistors - SOT223; VCEO=60V; hFE=63..160
General Purpose Transistors - SOT223; VCEO=80V; hFE=63..160
General Purpose Transistors - SOT223; VCEO=45V; hFE=40..250
General Purpose Transistors - SOT223; VCEO=45V; hFE=100..250
General Purpose Transistors - SOT223; VCEO=60V; hFE=100..250
General Purpose Transistors - SOT223; VCEO=80V; hFE=100..250
|
Infineon Technologies A...
Infineon Technologies AG
|
| AL03-910UH-KT AL03-240UH-MB AL051600UHJB AL051600U |
1 ELEMENT, 910 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 240 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1600 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 160 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 0.82 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2.7 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 200 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 110 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 0.15 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1.8 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 8.2 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 75 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 750 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3.3 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 62 uH, GENERAL PURPOSE INDUCTOR
|
RCD COMPONENTS INC
|
| 2N3904RL1 2N3904 2N3903RLRM 2N3904ZL1 2N3903 2N390 |
General Purpose Transistors NPN Silicon
General Purpose Transistors(NPN Silicon)
; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
Storage
|
ONSEMI[ON Semiconductor]
|
| IMZ4 A5800398 |
Transistors > Complex Bipolar Transistors
General purpose transistor (dual transistors)
From old datasheet system
|
Rohm CO.,LTD.
|
| MPS2222 MPS2222A MPS2222ARLRM MPS2222ARLRP MPS2222 |
Small Signal General Purpose NPN
General Purpose Transistors NPN Silicon
General Purpose Transistors(NPN Silicon)
|
ONSEMI[ON Semiconductor]
|
| NTE2404N NTE2404NPN NTE2404 NTE2405 |
300 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Silicon Complementary Transistors Darlington / General Purpose
Silicon Complementary Transistors Darlington, General Purpose
|
NTE[NTE Electronics]
|
| BC847BPDW1T1 BC847CPDW1T1 BC848BPDW1T1 BC846BPDW1T |
Dual General Purpose Amplifier Transistors (NPN PNP)(-45V通用型双放大器晶体管(NPN PNP，SOT-363封装)) 100 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
From old datasheet system
Dual General Purpose Transistors(NPN/PNP Duals)
|
ON Semiconductor
|
| CTC2F-R033M CTC2F-121J CTC2F-120K CTC2F-R047M CTC2 |
1 ELEMENT, 0.033 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 120 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 0.047 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 0.082 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 0.068 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 220 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 560 uH, GENERAL PURPOSE INDUCTOR
|
CENTRAL TECHNOLOGIES
|
| MSC82306 2765 |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS 射频
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
|
