PART |
Description |
Maker |
GDMBD2004 |
The GDMBD2004 is designed for ultra high speed switching SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD GTM CORPORATION
|
GBAV152 |
The GBAV152 is designed for ultra high speed switching application SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD GTM CORPORATION
|
KTK5131S |
SMOS FET/ Analog Switch Application N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH) N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING ANALOG SWITCH) N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
1SS352TPH3 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
1SS300 |
ULTRA HIGH SPEED SWITCHING APPLICATIONS
|
Guangdong Kexin Industrial ... Guangdong Kexin Industrial Co.,Ltd
|
1SS368 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
1SS30907 |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
1SS33607 1SS336 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
1SS19307 1SS193 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
1SS36207 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
1SS36007 1SS360 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
1SS361F |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|