PART |
Description |
Maker |
2SC3356 |
Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC= 7 mA, f = 1.0 GHz
|
TY Semiconductor Co., Ltd
|
SKDH116_12-L100 SKDH116_16-L100 SKDH116 SKDH116/12 |
MOSFET; ID (A): 0.02; VDS (V): 6; Pch : 0.1; |yfs| (S) typ: 0.024; PG (dB) typ: 24; Ciss (pF) typ: 1.75; NF (dB) typ: 1.5; IDSS (mA): -; Package: CMPAK-4 3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
PE15A3261 |
Gain 22 dB typ
|
Pasternack Enterprises,...
|
2SB736A |
Micro package. Complementary to 2SD780A. High DC Current Gain: hFE = 200 TYP.
|
TY Semiconductor Co., Ltd
|
2SC2223 |
Micro package. High gain bandwidth product fT=600MHz TYP Low output capacitance.
|
TY Semiconductor Co., Ltd
|
2SA1256 |
High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ).
|
TY Semiconductor Co., Ltd
|
R1005250L |
Si Reverse, low current, 5 - 100MHz, 25.4dB typ. Gain @ 100MHz, 140mA max. @ 24VDC
|
PDI[PREMIER DEVICES, INC.]
|
R0605400L |
Si Reverse, low current, 5 - 65MHz, 40.3dB typ. Gain @ 65MHz, 160mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
R2005280L |
Si Reverse, low current, 5 - 200MHz, 28.2dB typ. Gain @ 200MHz, 135mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
2SC1653 |
High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) High voltage VCEO : 130V
|
TY Semiconductor Co., Ltd
|
VTS3186 VTS3086 |
Process photodiode. Isc = 80 microA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K.
|
PerkinElmer Optoelectronics
|