PART |
Description |
Maker |
M48T512Y10 M48T512V-70PM1 M48T512Y-70PM1 M48T512V- |
5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER庐 SRAM 5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
CY7C1354CV25-166AXC CY7C1356CV25-166AXC CY7C1354CV |
9-Mbit (256 K 36/512 K 18) Pipelined SRAM with NoBLArchitecture 9-Mbit (256 K × 36/512 K × 18) Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor
|
SST27SF010 SST27SF010-70 SST27SF010-70-3C-NG SST27 |
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST[Silicon Storage Technology, Inc] SST[Silicon Storage Technology Inc]
|
M29W800FB9D11 M29W800FB-KGD |
Known good die, 8-Mbit (1 Mbit x 8 or 512 Kbits x 16), boot block, 3 V supply Flash memory
|
Numonyx B.V http://
|
AM29F040B-1 AM29F040B-120EC AM29F040B-120EE AM29F0 |
From old datasheet system EEPROM,FLASH,512KX8,CMOS,DIP,32PIN,PLASTIC 4 Mbit (512 K x 8-Bit) 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
|
AMD[Advanced Micro Devices] AMD Inc
|
M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位(x16插槽,多银行,多层次,多突发28兆位闪存(突发)移动存储芯片.8V电源,多芯片封装
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
HYB18T512800B2FL-3S HYB18T512400B2F-3.7 |
512-Mbit Double-Data-Rate-Two SDRAM 64M X 8 DDR DRAM, 0.45 ns, PBGA60 512-Mbit Double-Data-Rate-Two SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA60
|
Qimonda AG
|
CY7C1051DV33-12ZSXI CY7C1051DV33-12ZSXIT |
8-Mbit (512 K 16) Static RAM
|
Cypress
|
CY7C1062DV33-10BGIT CY7C1062DV33-10BGXI CY7C1062DV |
16-Mbit (512 K 32) Static RAM
|
Cypress
|
CYRS1049DV33 |
4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
CY14B108L-ZS20XI |
8-Mbit (1024 K 8/512 K 16) nvSRAM
|
Cypress
|
CY14B108L-ZS45XI CY14B108L-ZS45XIT |
8-Mbit (1024 K 8/512 K 16) nvSRAM
|
Cypress
|