| PART |
Description |
Maker |
| STP33N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| P500-G200-WH P850-G200-WH P850-G120-WH P500-G120-W |
Extremely high speed performance
|
Bourns Electronic Solutions
|
| FDG316P |
High performance trench technology for extremely low
|
TY Semiconductor Co., Ltd
|
| FDG312P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| FDG311N |
High performance trench technology for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2301 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| SI2301 |
High dense cell design for extremely low RDS(ON)
|
MAKO SEMICONDUCTOR CO.,...
|
| CES2303 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| FDG328P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
| FHR2-T238 FHR2-T2381R1G FHN2-T238 FNR4-T238 FHR4-T |
High Stability Extremely Low Ohm Rating 高稳定性极低的电阻额定
|
http://
Willow Technologies Ltd
Willow Technologies Limited
Willow Technologies, Ltd.
|
| FDC608PZ |
High performance trench technology for extremely low RDS
|
TY Semiconductor Co., Ltd
|
| CMLTA4410 |
SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR
|
Central Semiconductor Corp
|
