PART |
Description |
Maker |
ASI10599 HF100-12 |
NPN Silicon RF Power Transistor(Ic:20 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:20 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc.
|
CSB1116 CSB1116A CSB1116G CSB1116L CSB1116Y |
0.750W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 1.000A Ic, 135 - 600 hFE 0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 135 - 400 hFE 0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 200 - 400 hFE 0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 300 - 600 hFE 0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 135 - 270 hFE
|
Continental Device India Limited
|
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic
|
USHA India LTD
|
ASI10685 ULBM45 ASI10653 TVU150A |
NPN Silicon RF Power Transistor(Ic:10.0 A,Vcbo: 36 V,Vceo: 16 V,Vces: 36V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:10.0 A,Vcbo: 36 V,Vceo: 16 V,Vces: 36V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
CMBT2484 |
0.225W General Purpose NPN SMD Transistor. 60V Vceo, 0.050A Ic, 250 hFE.
|
Continental Device India Limited
|
ASI10593 HF10-12S |
NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
|
CFA1046Y |
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CFC2026Y
|
Continental Device India Limited
|
CMMT491 |
0.500W General Purpose NPN SMD Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. Complementary CMMT591
|
Continental Device India Limited
|
ASI10669 UHBS15-2 ASI10541 ASI10564 ASI10606 ASI10 |
NPN Silicon RF Power Transistor(Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)) UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
LTC3834-1 LTC3891 LTC3863 LTC3835-1 LTC3859AL LTC3 |
60V Low IQ Inverting DC/DC Controller Wide Operating VIN Range: 3.5V to 60V
|
Linear Technology
|
2SD313 2SD313D |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)| TO - 220AB现有 POWER TRANSISTORS(3A/60V/30W) POWER TRANSISTORS(3A,60V,30W)
|
Mospec Semiconductor, Corp. MOSPEC[Mospec Semiconductor]
|
2SA733 |
Collector-Base Voltage: VCBO=-60V Emitter to base voltage VEBO -5.0 V
|
TY Semiconductor Co., Ltd
|