| PART |
Description |
Maker |
| TGS2306 |
High Power DC - 18GHz SPDT FET Switch
|
TriQuint Semiconductor
|
| PE7113 |
SMA FEMALE COAXIAL SWITHCH FREQUENCY RANGE: 1GHz 18GHz SWITCH TYPE: SPDT
|
Pasternack Enterprises, Inc...
|
| PE4283 4283-00 4283-01 4283-02 4283-51 4283-52 |
SPDT High Power UltraCMOS?/a> DC - 4.0 GHz RF Switch
SPDT High Power UltraCMOSDC - 4.0 GHz RF Switch
SPDT High Power UltraCMOS⑩ DC - 4.0 GHz RF Switch
|
http://
PEREGRINE[Peregrine Semiconductor Corp.]
|
| R411806121 R411803121 |
ATTENUATOR, SMA 2W 6DB 18GHZATTENUATOR, SMA 2W 6DB 18GHZ; Impedance:50R; Attenuation:6dB; Connector type:SMA; Frequency, operating max:18GHz; Power rating:2W 0 MHz - 18000 MHz RF/MICROWAVE FIXED ATTENUATOR
ATTENUATOR, SMA 2W 3DB 18GHZATTENUATOR, SMA 2W 3DB 18GHZ; Impedance:50R; Attenuation:3dB; Connector type:SMA; Frequency, operating max:18GHz; Power rating:2W
|
Radiall S.A.
RADIALL S A
|
| MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| TPD03-02G18BS |
2-18GHz 3-Way Power Divider
|
Transcom, Inc.
|
| TPD04-02G18S |
2-18GHz 4-Way Power Divider
|
Transcom, Inc.
|
| UPG2010TB UPG2010TB-E3 |
High power single control L-band SPDT switch.
NEC’s HIGH POWER SINGLE CONTROL L-BAND SPDT SWITCH
NECs HIGH POWER SINGLE CONTROL L-BAND SPDT SWITCH
|
NEC
ETC
California Eastern Laboratories
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
