PART |
Description |
Maker |
BRCB032GWZ-3E2 |
WL-CSP EEPROM
|
ROHM
|
BRCD064GWZ-3E2 |
WL-CSP EEPROM
|
ROHM
|
BU9833GUL-W BU9833GUL-WE2 BU9833GUL-W10 |
WL-CSP EEPROM family I2C BUS
|
Rohm
|
M24C32S-FCU |
32-Kbit serial I2C bus EEPROM 4 balls CSP
|
ST Microelectronics
|
M24128S-FCU |
128-Kbit serial I2C bus EEPROM 4 balls CSP
|
ST Microelectronics
|
M6MGE13VW66CWG-P |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas
|
M6MGD13VW34DWG-P |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas
|
FCRN303 FCRN3031003FA |
Percision thin film resistor CSP 0805 PRECISION THIN FILM RESISTOR CSP (CHIP SCALE PACKAGE)
|
CALMIRCO[California Micro Devices Corp]
|
K4M56163PE-RG K4M56163PE-R K4M56163PE-F90 K4M56163 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54
|
Samsung Semiconductor Co., Ltd. Omron Electronics, LLC SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
PUMA67F16006A-80E PUMA67F16006A-12E PUMA67F16006AI |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 120NS, SOIC, IND TEMP(EEPROM) 70NS, PDIP, IND TEMP(EEPROM) 120NS, TSOP, COM TEMP(EEPROM) 200NS, PLCC, COM TEMP(EEPROM) DIE(EEPROM) 90NS, PGA, 883C; LEVEL B FULLY COMPLIANT(EEPROM) 120NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM) 120NS, PLCC, IND TEMP(EEPROM) X32号,闪存EEPROM模块 x32 Flash EEPROM Module X32号,闪存EEPROM模块
|
Lattice Semiconductor, Corp. Amphenol, Corp.
|
24CO25-SN 24CO25-ST 24CO25-IP 24CO25-ISN 24CO25-IS |
2K 2.5V I 2 C Serial EEPROM 2K 2.5VI 2荤⑩串行EEPROM 2K 2.5V IIC serial EEPROMs(2.5V~5.5V,2K10M次擦写周可寻址,EEPROM) 2K2.5VI2CSerialEEPROM 2K 2.5V I 2 C ?Serial EEPROM 2K 2.5V I2C EEPROM
|
Microchip Technology, Inc. MicrochipTechnology Microchip Technology Inc.
|