| PART |
Description |
Maker |
| 2SD2248 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive
|
TOSHIBA
|
| 2SC982TM03 2SC982TM |
Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) Printer Drive, Core Drive and LED Drive Applications Low Frequency Amplifier Applications
|
Toshiba Semiconductor
|
| 250101MA004XX00XX |
2.50mm Mobile Phone Battery
|
SUYIN USA, INC.
|
| 2SK3438 |
Silicon N Channel MOS Type DC-DC Converter, Relay Drive and Motor Drive Applications
|
Toshiba Semiconductor
|
| 2SK261506 2SK2615 |
Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications
|
Toshiba Semiconductor
|
| 2SK299606 2SK2996 |
Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications
|
Toshiba Semiconductor
|
| 2SK299106 2SK2991 |
Silicon N Channel MOS Type DC−DC Converter Relay Drive and Motor Drive Applications
|
Toshiba Semiconductor
|
| 2SK291606 2SK2916 |
Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications
|
Toshiba Semiconductor
|
| 2SK260606 2SK2606 |
Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications
|
Toshiba Semiconductor
|
| 2SK2961 |
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, RELAY DRIVE MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SK2996 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) DC .DC Converter, Relay Drive and Motor Drive Applications
|
TOSHIBA
|
