| PART |
Description |
Maker |
| AS8ER128K32Q-250/XT AS8ER128K32Q-250/883C AS8ER128 |
128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY 128K X 32 EEPROM 5V MODULE, 250 ns, CQFP68
|
Austin Semiconductor, Inc
|
| M28010-15WKA6 M28010-15WBA1 M28010-20RBA6 M28010-1 |
128K X 8 EEPROM 3V, 150 ns, PQCC32
128K X 8 EEPROM 3V, 150 ns, PDIP32
128K X 8 EEPROM 3V, 200 ns, PDIP32
128K X 8 EEPROM 3V, 100 ns, PDIP32
|
STMICROELECTRONICS
|
| IHB2EB1R0M IHB6BV6R8M IHB2BV121K IHB6BV123K IHB2BV |
General Fixed Inductor, 1 ELEMENT, 1 uH, GENERAL PURPOSE INDUCTOR, HALOGEN FREE AND ROHS COMPLIANT
General Fixed Inductor, IND,WIREWOUND,6.8UH,20% TOL,20% -TOL
General Fixed Inductor, IND,WIREWOUND,120UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,12MH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,8.2UH,20% TOL,20% -TOL
IND FLTR 33UH 20% 1KHZ 13.5A RDL - Bulk
General Fixed Inductor, IND,WIREWOUND,390UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,3.3UH,20% TOL,20% -TOL
General Fixed Inductor, IND,WIREWOUND,8.2MH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,820UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,1.2MH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,100UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,22UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,10MH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,18UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,150UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,1.5MH,10% TOL,10% -TOL
|
Vishay Dale
|
| SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| 5962-3826707 5962-3826705 5962-3826701 |
128K x 8 EEPROM, MIL-STD-883C, 120ns
128K x 8 EEPROM, CMOS, MIL-STD-883, 150ns
128K EEPROM MIL-STD-883, 250ns
|
Intersil
|
| ACT-E128K32C-150P7Q ACT-E128K32C-120P7Q ACT-E128K3 |
128K X 32 EEPROM 5V MODULE, 150 ns, CPGA66 CERAMIC, PGA-66
128K X 32 EEPROM 5V MODULE, 120 ns, CPGA66 CERAMIC, PGA-66
128K X 32 EEPROM 5V MODULE, 250 ns, CPGA66 CERAMIC, PGA-66
128K X 32 EEPROM 5V MODULE, 200 ns, CQMA68
128K X 32 EEPROM 5V MODULE, 250 ns, CQMA68
128K X 32 EEPROM 5V MODULE, 120 ns, CQMA68
|
Aeroflex, Inc.
|
| 24AA128-I_MS 24AA128-I_P 24AA128-I_ST 24AA12809 24 |
16K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
128K I2C?/a> CMOS Serial EEPROM
128K I2C CMOS Serial EEPROM
128K I2C垄芒 CMOS Serial EEPROM
|
Microchip Technology
|
| WME128K8-120DEI WME128K8-140DEI WME128K8-140DEIA W |
120ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
140ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
250ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
300ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
200ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
150ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
|
White Electronic Designs
|
| GLS29EE010-70-4C-WHE GLS29EE010-70-4C-NHE-T SST29E |
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PDSO32
128K X 8 FLASH 5V PROM, 70 ns, PDSO32
128K X 8 FLASH 5V PROM, 90 ns, PQCC32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
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