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CY7S1061G30-10ZXIES - 16-Mbit (1 M words 16 bit) Static RAM with Deep-Sleep Feature and Error-Correcting Code (ECC)

CY7S1061G30-10ZXIES_8465206.PDF Datasheet


 Full text search : 16-Mbit (1 M words 16 bit) Static RAM with Deep-Sleep Feature and Error-Correcting Code (ECC)


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THM322020S-10 THM322020S-80 THM322020SG-10 THM3220 Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
2097152 WORDS x 32 BIT DYNAMIC RAM MODULE
2,097,152 WORDS x 32 BIT DYNAMIC RAM MODULE
2/097/152 WORDS x 32 BIT DYNAMIC RAM MODULE
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
THM321020S-10 THM321020S-80 THM321020SG-10 THM3210 Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1048576 WORDS x 32 BIT DYNAMIC RAM MODULE
1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
MSM534052E From old datasheet system
262,144-Words x 16-bit or 524,288-Bytes x 8-bit MaskROM 8Words x 16-Bit or 16Bytes x 8-Bit/Page Mode MASKROM
262144-Words x 16-bit or 524288-Bytes x 8-bit MaskROM 8Words x 16-Bit or 16Bytes x 8-Bit/Page Mode MASKROM
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
AM41LV3204MT10IT Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM
Advanced Micro Devices, Inc.
IS42S32800B-6B IS42S32800B-6BLI IS42S32800B-6T IS4 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
ISSI[Integrated Silicon Solution, Inc]
IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
HY51V17403HGJ-5 HY51V17403HGJ-6 HY51V17403HGJ-7 HY 4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
Hynix Semiconductor
IS42VS16100C1-10TI 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
Integrated Silicon Solution, Inc.
MSM538052E MSM538052E-XXGS-K MSM538052E-XXRS MSM53 524,288-Words x 16-bit or 1,048,576-Bytes x 8-bit MaskROM, 8Words x 16-Bit or 16Bytes x 8-Bit/Page Mode MASKROM
OKI SEMICONDUCTOR CO., LTD.
LC338128M LC338128P LC338128PL LC338128M-80 LC3381 1 MEG (131072 words x 8 bit) pseudo-SRAM
1MEG (131072 WORDS X 8BITS) PSEUDO-SRAM
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
 
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