| PART |
Description |
Maker |
| RT9161-33CV |
Iout(mA) = 300 ;; IGND1( GA) = 110 ;; Output Voltage(V) = 1.5~5.0 ;; Vin (Min) = ;; Vin (Max) = 14 ;; Accuracy(%) = 2 ;; Features /
|
RICHTEK
|
| P2681A-08TT P2681A P2681A-08SR P2681A-08ST P2681A- |
ICs for Inductive Proximity Switches; Package: S--0; VCC (min): 3.1 V; VCC (max): 40.0 V; ICC (max): 0.84 mA; IQ (max): 60.0 mA; Operating Temperature (min): -40.0 degC;
General Purpose EMI Reduction IC
|
ALSC[Alliance Semiconductor Corporation]
|
| ASI10523 ASI1002 |
NPN Silicon RF Power Transistor Designed for General Purpose Class C Power Amplifier up to 1500 MHz(Ic: 200mA ,Vcc: 35 V)(NPN 纭??灏??????朵?绠??ㄤ????C绾ф?澶у?,棰??杈?500 MHz(Ic:200mA ,Vcc: 35 V))
|
ADVANCED SEMICONDUCTOR INC
|
| LTM4608AMPV-PBF LTM4608AMPV LTM4608AIV-PBF LTM4608 |
Low VIN, 8A DC/DC μModule with Tracking, Margining, and Frequency Synchronization
Low VIN, 8A DC/DC 渭Module with Tracking, Margining, and Frequency Synchronization
Low VIN, 8A DC/DC 楼矛Module with Tracking, Margining, and Frequency Synchronization
|
Linear Technology
|
| IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128K x 8 Ultra Low Power and Low VCC SRAM
From old datasheet system
55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| 75H-501 75H-504 75H-502 75H-503 75H-202 75H-203 75 |
High PSRR 300 mA LDO, Vin 10V max, Vout =0.9V, -40C to 85C, 5-SOT-23, T/R
HIGH PSRR 150 MA LDO, VIN 10V MAX, VOUT = 6.0V, -40C to 85C, 5-SOT-23, T/R
TRIMMER 6.35MM CERMET EIN 100R 300V 0.5W
TRIMMER 6.35MM CERMET EIN 200R 300V 0.5W
TRIMMER 6.35MM CERMET EIN 1K 300V 0.5W
TRIMMER 10K
TRIMMER 20K
High PSRR 150 mA LDO, Vin 10V max, Vout =0.9V, -40C to 85C, 5-SOT-23, T/R 修边.35mm的金属陶瓷艾10,000 300V.5W
High PSRR 150 mA LDO, Vin 10V max, Vout =0.9V, -40C to 85C, 5-SOT-23, T/R 修边.35mm的艾00R 300V金属陶瓷.5W
|
Aimtec
|
| MIC5325-1.2YMT MIC5325-1.5YMT MIC5325-1.8YMT |
Low VIN/VOUT 400mA ULDO with Ultra-Low IQ
Low VIN/VOUT 400mA ULDO⑩ with Ultra-Low IQ
|
Micrel Semiconductor
|
| LPA2160-00 |
Po at 10% THD plus N, VIN = 3.7V
|
Lowpower Semiconductor ...
|
| LP28019-00 |
Vin Over Voltage Protection:6.5V
|
Lowpower Semiconductor ...
|
| SIL30E-12W3V3-VJ |
12 Vin Single Output
|
Emerson Network Power
|
